diff --git a/[refs] b/[refs]
index 199d13d657dd..daa40e12b446 100644
--- a/[refs]
+++ b/[refs]
@@ -1,2 +1,2 @@
 ---
-refs/heads/master: c01804edde20414b0cadbe38cc9974a54a31e36f
+refs/heads/master: 8c3423359644d01cfba3a401e403c549c3f88ac4
diff --git a/trunk/drivers/mtd/nand/nand_base.c b/trunk/drivers/mtd/nand/nand_base.c
index 3ed9c5e4d34e..35b4565050f1 100644
--- a/trunk/drivers/mtd/nand/nand_base.c
+++ b/trunk/drivers/mtd/nand/nand_base.c
@@ -3132,8 +3132,8 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
 	 * Bad block marker is stored in the last page of each block
 	 * on Samsung and Hynix MLC devices; stored in first two pages
 	 * of each block on Micron devices with 2KiB pages and on
-	 * SLC Samsung, Hynix, Toshiba and AMD/Spansion. All others scan
-	 * only the first page.
+	 * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix.
+	 * All others scan only the first page.
 	 */
 	if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
 			(*maf_id == NAND_MFR_SAMSUNG ||
@@ -3143,7 +3143,8 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
 				(*maf_id == NAND_MFR_SAMSUNG ||
 				 *maf_id == NAND_MFR_HYNIX ||
 				 *maf_id == NAND_MFR_TOSHIBA ||
-				 *maf_id == NAND_MFR_AMD)) ||
+				 *maf_id == NAND_MFR_AMD ||
+				 *maf_id == NAND_MFR_MACRONIX)) ||
 			(mtd->writesize == 2048 &&
 			 *maf_id == NAND_MFR_MICRON))
 		chip->bbt_options |= NAND_BBT_SCAN2NDPAGE;