diff --git a/[refs] b/[refs]
index 72a598dfe4f8..790076e3572e 100644
--- a/[refs]
+++ b/[refs]
@@ -1,2 +1,2 @@
 ---
-refs/heads/master: 9ac4e613a88d7f6a7a9651d863e9c8f63b582718
+refs/heads/master: 0e4ca7e5101e7f4054452b8d71c535eec64a187b
diff --git a/trunk/include/linux/mtd/mtd.h b/trunk/include/linux/mtd/mtd.h
index fe8d77ebec13..9d5306bad117 100644
--- a/trunk/include/linux/mtd/mtd.h
+++ b/trunk/include/linux/mtd/mtd.h
@@ -144,6 +144,17 @@ struct mtd_info {
 	 */
 	uint32_t writesize;
 
+	/*
+	 * Size of the write buffer used by the MTD. MTD devices having a write
+	 * buffer can write multiple writesize chunks at a time. E.g. while
+	 * writing 4 * writesize bytes to a device with 2 * writesize bytes
+	 * buffer the MTD driver can (but doesn't have to) do 2 writesize
+	 * operations, but not 4. Currently, all NANDs have writebufsize
+	 * equivalent to writesize (NAND page size). Some NOR flashes do have
+	 * writebufsize greater than writesize.
+	 */
+	uint32_t writebufsize;
+
 	uint32_t oobsize;   // Amount of OOB data per block (e.g. 16)
 	uint32_t oobavail;  // Available OOB bytes per block