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ARM: dts: omap5-evm: LPDDR2 memory device details for EVM
Samsung's K3PE0E000B memory part is used in OMAP5-evm board. Adding timings and geometry details for Samsung's memory part and attaching the same to device-handle of EMIF1/2. Signed-off-by: Lokesh Vutla <lokeshvutla@ti.com> Signed-off-by: Benoit Cousson <b-cousson@ti.com>
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Lokesh Vutla
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Benoit Cousson
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Nov 5, 2012
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/* | ||
* Timings and Geometry for Samsung K3PE0E000B memory part | ||
*/ | ||
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/ { | ||
samsung_K3PE0E000B: lpddr2 { | ||
compatible = "Samsung,K3PE0E000B","jedec,lpddr2-s4"; | ||
density = <4096>; | ||
io-width = <32>; | ||
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tRPab-min-tck = <3>; | ||
tRCD-min-tck = <3>; | ||
tWR-min-tck = <3>; | ||
tRASmin-min-tck = <3>; | ||
tRRD-min-tck = <2>; | ||
tWTR-min-tck = <2>; | ||
tXP-min-tck = <2>; | ||
tRTP-min-tck = <2>; | ||
tCKE-min-tck = <3>; | ||
tCKESR-min-tck = <3>; | ||
tFAW-min-tck = <8>; | ||
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timings_samsung_K3PE0E000B_533MHz: lpddr2-timings@0 { | ||
compatible = "jedec,lpddr2-timings"; | ||
min-freq = <10000000>; | ||
max-freq = <533333333>; | ||
tRPab = <21000>; | ||
tRCD = <18000>; | ||
tWR = <15000>; | ||
tRAS-min = <42000>; | ||
tRRD = <10000>; | ||
tWTR = <7500>; | ||
tXP = <7500>; | ||
tRTP = <7500>; | ||
tCKESR = <15000>; | ||
tDQSCK-max = <5500>; | ||
tFAW = <50000>; | ||
tZQCS = <90000>; | ||
tZQCL = <360000>; | ||
tZQinit = <1000000>; | ||
tRAS-max-ns = <70000>; | ||
tDQSCK-max-derated = <6000>; | ||
}; | ||
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timings_samsung_K3PE0E000B_266MHz: lpddr2-timings@1 { | ||
compatible = "jedec,lpddr2-timings"; | ||
min-freq = <10000000>; | ||
max-freq = <266666666>; | ||
tRPab = <21000>; | ||
tRCD = <18000>; | ||
tWR = <15000>; | ||
tRAS-min = <42000>; | ||
tRRD = <10000>; | ||
tWTR = <7500>; | ||
tXP = <7500>; | ||
tRTP = <7500>; | ||
tCKESR = <15000>; | ||
tDQSCK-max = <5500>; | ||
tFAW = <50000>; | ||
tZQCS = <90000>; | ||
tZQCL = <360000>; | ||
tZQinit = <1000000>; | ||
tRAS-max-ns = <70000>; | ||
tDQSCK-max-derated = <6000>; | ||
}; | ||
}; | ||
}; |